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Sentron Angle Sensor, Linear 2-Axis Hall IC, 2SA-10G 

Tabs
 

  Specifications

     2SA-10G Data Sheet, 416KB
     [Discontinued] AN_360KIT Data Sheet, 221KB, replaced by 360ASM-01.
     

  Manuals

         AN_114Kit Manual, 64KB-(obsolete)
 

  Technical Notes

          Angular Position Sensing with 2-Axis Hall ICs March 1, 2003


  FAQs

     Theory and Application of Hall Effect. From Wikipedia
     What is IMC-Hall® ?
     How do IMC-Hall® Sensors compare to other Hall Sensors ?
     How does Sentron's 2SA-10G 2-axis Hall effect sensor compare to magnetoresistive (MR)
       sensors for angle measurement applications ?

      For further information please contact Lou Law.

What is IMC-Hall® ?




   IMC-Hall
®is the short-form name for a magnetic sensor made of an integrated combination of a Hall elements, electronic circuitry and a ferromagnetic layer. The ferromagnetic layer forms the integrated magnetic concentrator (IMC), which is placed on the CMOS Hall ASIC chip in a batch post process. Whereas a conventional Hall ASIC responds to a magnetic field perpendicular to the chip surface, a Hall ASIC with IMC responds to a magnetic field parallel with the chip surface

Conventional Hall Sensor ASICs consist of a combination of Hall elements and electronic circuitry on a silicon chip. Due to the nature of the Hall elements such sensors are only sensitive to a magnetic field B perpendicular to the chip surface.  

A single-axis IMC-Hall
® ASIC also consists of Hall elements and electronic circuitry, but additionally it has a thin structured ferromagnetic layer on the surface. A magnetic field B parallel with the chip surface is rotated locally to vertical direction under the edges of the IMC's close to the gap, so that now it can be measured by the Hall elements. Moreover the IMC's also function as passive amplifiers.

By applying a single disk-shape IMC on the chip surface, a two-axis IMC-Hall
® sensor is realized. Two Hall elements measure under its edge a magnetic field component Bx (red), and two other Hall elements measured By (blue). This allows to make a real two-axis magnetic field sensor for example for angular position measurement.

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How do IMC-Hall® Sensors compare to other Hall Sensors ?
     Sensitivity - IMC-Hall® sensors are considerably more sensitive than other Hall sensors
     Sensitive Direction - IMC technology allows for the measurement of two orthogonal magnetic field components by a single sensor.
     Resolution - Sentron's IMC-Hall® sensors have a resolution about 10 times higher than other Hall sensors.
     Output Signal Level - Sentron’s IMC-Hall® sensors feature a ratiometric, amplified differential output of 2.5V ± 2V or single ended output 0.5V . 4.5V.
     Bandwidth - Sentron’s IMC-Hall® sensors feature high sensitivity, low offset and low offset
drift without having to compromise on speed.
     Switching level - Sentron’s IMC-Hall® sensor 1SA-1 switches at 0.2mT
     Hysteresis - In Sentron IMC-Hall® sensors hysteresis effects are virtually non-existent.
     Cost - Sentron’s IMC-Hall® sensors are manufactured by standard high-volume CMOS processes and are therefore low-cost devices.
 
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How does Sentron's 2SA-10G 2-axis Hall effect sensor compare to magnetoresistive (MR) sensors for angle measurement applications ?
     Axial Tolerances - The 2SA-10G 2-axis sensor may be mounted with greater axial tolerances than is possible with MR sensors.
     Distance Tolerances - The 2SA-10G 2-axis sensor may be mounted further away from the rotating magnet than is possible with MR sensors.
     Hysteresis - In Sentron 2SA-10G sensors hysteresis effects are virtually non-existent.
     Output Signal Level - The 2SA-10G yields standard -.5 to 4.5V analog output voltages.
     EMI - Sentron’s 2SA-10G 2-axis sensor is much less sensitive to EMI than MR sensors
     Magnetic Robustness - Sentron’s 2SA-10G 2-axis sensor does not require resteeing and is not damaged by large magnetic fields.
     Cost - Sentron’s 2SA-10G 2-axis sensor reduces overall system cost significantly.
 
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Last updated on 5 March, 2015
 
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